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Type Designator: C102

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage Vcb : 30 V

Maximum Collector Current Ic max : 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 0.8 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 13

Noise Figure, dB: -

Package: TO5

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C102 Transistor Equivalent Substitute - Cross-Reference Search

C102 Datasheet (PDF)

1.1. mmbtrc101ss mmbtrc102ss mmbtrc103ss mmbtrc104ss mmbtrc105ss mmbtrc106ss.pdf Size:106K _upd

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MMBTRC101SS .. MMBTRC106SS MMBTRC101SS .. MMBTRC106SS Surface Mount Bias Resistor Transistors NPN NPN SMD Transistoren mit Eingangsspannungsteiler Version 2011-02-10 Power dissipation – Verlustleistung 200 mW ±0.1 1.1 2.9 Plastic case SOT-23 0.4 3 Kunststoffgehäuse (TO-236) Type Weight approx. – Gewicht ca. 0.01 g Code 1 2 Plastic material has UL classification 94V-

1.2. 2sc1027.pdf Size:160K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1027 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute ma

1.3. ktc1020.pdf Size:72K _kec

SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES Excellecnt hFE Linearity : hFE(2)=25Min. : VCE=6V, IC=400mA. DIM MILLIMETERS O A 3.20 MAX 1 Watt Amplifier Application. H M B 4.30 MAX C 0.55 MAX Complementary to KTA1021. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX J

1.4. ktc1026.pdf Size:89K _kec

SEMICONDUCTOR KTC1026 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. B D FEATURES High Voltage : VCEO=180V. DIM MILLIMETERS P High DC Current Gain. DEPTH:0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX MAXIMUM RATINGS (Ta=25 ) H 0.55 MAX FF _ J 14.00 + 0.50 CHAR

1.5. ktc1027.pdf Size:79K _kec

SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE Complementary to KTA1023. DIM MILLIMETERS P DEPTH:0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHA RACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO Collector-Base Voltage 120 V H 0.55 MAX FF _ J 14.00 + 0.50 V

1.6. 2sc1027.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1027 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC convertor Ў¤ General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SY

1.7. ktc1027.pdf Size:45K _wietron

KTC1027 WEITRON NPN Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25? unless otherwise noted) value Parameter Symbol Units Collector-Base Voltage VCBO 120 V 120 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage VEBO 0.8 A Collector Current -Continuous IC Collector Power Dissipation PC 0.75 W R?JA Thermal Resistance From Junct

1.8. ftc1027.pdf Size:329K _first_silicon

SEMICONDUCTOR FTA1027 TECHNICAL DATA FTC1027 TRANSISTOR (NPN) B FEATURES Complementary to FTA1023 High Voltage Applications E DIM MILLIMETERS A 8.2 MAX D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) B 5.1 MAX C 1.58 MAX D 0.55 MAX E 0.7 TYP F 1.27 TYP G 2.54 TYP F H 14.20 MAX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) G J 0.45 MAX L 4.10 MAX Symbol

1.9. ktc1020.pdf Size:1002K _kexin

DIP Type Transistors NPN Transistors KTC1020 TO-92M Unit:mm 6.0 ± 0.2 ■ Features 1.0 ±0.1 ● Excelent hFE Linearity ● 1 Watt Amplifier Application 0.50 ±0.1 ● Complementary to KTA1021 2 1 3 1.50 3.0 ±0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35

Datasheet: C066P, C1, C100, C1001, C1002, C1003, C1004, C101, MJE13005, C103, C106, C112, C1-12, C118, C119, C12-28, C1-28.

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BJT: RD9FE-V RD9FE-T RD9FE-R FJP3305H2 CHT807PTS CHT807PTR CHT807PTQ 3DA4544Y 3DA4544O 3DA4544R 3DD2553 2SD1710C NP061A3 KTC601UY KSC5802D FA1L3Z-L38 FA1L3Z-L37 FA1L3Z-L36 EB102 DC8550E